Microscopic study of 1f/noise in metal nanobridgesRALLS, K. S; BUHRMAN, R. A.Physical review. B, Condensed matter. 1991, Vol 44, Num 11, pp 5800-5817, issn 0163-1829Article

Defect interactions and noise in metallic nanoconstrictionsRALLS, K. S; BUHRMAN, R. A.Physical review letters. 1988, Vol 60, Num 23, pp 2434-2437, issn 0031-9007Article

Thin silicon oxides grown by low-temperature rf plasma anodization and depositionNELSON, S. A; BUHRMAN, R. A.Applied physics letters. 1987, Vol 50, Num 16, pp 1095-1097, issn 0003-6951Article

Nonequilibrium effects and subgap structure in superconducting contactsPESHKIN, M. A; BUHRMAN, R. A.Physical review. B, Condensed matter. 1983, Vol 28, Num 1, pp 161-171, issn 0163-1829Article

High optical contrast in VO₂ thin films due to improved stoichiometryNYBERG, G. A; BUHRMAN, R. A.Thin solid films. 1987, Vol 147, Num 2, pp 111-116, issn 0040-6090Article

Obervations of Kondo scattering without magnetic impurities : a point contact study of two-level tunneling systems in metalsRALPH, D. C; BUHRMAN, R. A.Physical review letters. 1992, Vol 69, Num 14, pp 2118-2121, issn 0031-9007Article

Defect dynamics and wear-out in thin silicon oxidesFARMER, K. R; BUHRMAN, R. A.Semiconductor science and technology. 1989, Vol 4, Num 12, pp 1084-1105, issn 0268-1242, 22 p.Article

Current fluctuations and silicon oxide wear-out in metal-oxide-semiconductor tunnel diodesFARMER, K. R; SALETTI, R; BUHRMAN, R. A et al.Applied physics letters. 1988, Vol 52, Num 20, pp 1749-1751, issn 0003-6951Article

Composition of 1/f noise in metal-insulator-metal tunnel junctionsROGERS, C. T; BUHRMAN, R. A.Physical review letters. 1984, Vol 53, Num 13, pp 1272-1275, issn 0031-9007Article

Optical response of Cermet composite films in the microstructural transition region = Réponse optique de couches minces de composite Cermet dans la région de transition microstructuraleGIBSON, U. J; BUHRMAN, R. A.Physical review. B, Condensed matter. 1983, Vol 27, Num 8, pp 5046-5051, issn 0163-1829Article

Boron diffusion in silicon oxides and oxynitridesELLIS, K. A; BUHRMAN, R. A.Journal of the Electrochemical Society. 1998, Vol 145, Num 6, pp 2068-2074, issn 0013-4651Article

Role of interfacial nitrogen in improving thin silicon oxides grown in N₂OCARR, E. C; BUHRMAN, R. A.Applied physics letters. 1993, Vol 63, Num 1, pp 54-56, issn 0003-6951Article

NbN Josephson tunnel junctions for terahertz local oscillatorsROBERTAZZI, R. P; BUHRMAN, R. A.Applied physics letters. 1988, Vol 53, Num 24, pp 2441-2443, issn 0003-6951Article

Nature of single-localized-electron states derived from tunneling measurementsROGERS, C. T; BUHRMAN, R. A.Physical review letters. 1985, Vol 55, Num 8, pp 859-862, issn 0031-9007Article

A structural and electrical comparison of thin SiO₂ films grown on silicon by plasma anodization and rapid thermal processing to furnace oxidationNELSON, S. A; HALLEN, H. D; BUHRMAN, R. A et al.Journal of applied physics. 1988, Vol 63, Num 10, pp 5027-5035, issn 0021-8979Article

Fabrication of thin-film metal nanobridgesRALLS, K. S; BUHRMAN, R. A; TIBERIO, R. C et al.Applied physics letters. 1989, Vol 55, Num 23, pp 2459-2461, issn 0003-6951, 3 p.Article

Localized-state interactions in metal-oxide-semiconductor tunnel diodesFARMER, K. R; ROGERS, C. T; BUHRMAN, R. A et al.Physical review letters. 1987, Vol 58, Num 21, pp 2255-2258, issn 0031-9007Article

Production of YBa₂Cu₃O_7-y superconducting thin films in situ by high-pressure reactive evaporation and rapid thermal annealingLATHROP, D. K; RUSSEK, S. E; BUHRMAN, R. A et al.Applied physics letters. 1987, Vol 51, Num 19, pp 1554-1556, issn 0003-6951Article

Impact of a single defect on the conductance : local interference and universal conductance fluctuationsRALLS, K. S; RALPH, D. C; BUHRMAN, R. A et al.Physical review. B, Condensed matter. 1993, Vol 47, Num 16, pp 10509-10514, issn 0163-1829Article

Nitrous oxide (N₂O) processing for silicon oxynitride gate dielectricsELLIS, K. A; BUHRMAN, R. A.IBM journal of research and development. 1999, Vol 43, Num 3, pp 287-300, issn 0018-8646Article

On the characteristic voltage of highly oxygenated YBCO grain boundary junctionsSYDOW, J. P; BERNINGER, M; BUHRMAN, R. A et al.Superconductor science & technology (Print). 1999, Vol 12, Num 11, pp 723-725, issn 0953-2048Conference Paper

Effects of oxygen content on YBCO Josephson junction structuresSYDOW, J. P; BERNINGER, M; BUHRMAN, R. A et al.IEEE transactions on applied superconductivity. 1999, Vol 9, Num 2, pp 2993-2996, issn 1051-8223, 3Conference Paper

Growth and properties of YSr₂Cu_2.75Mo_0.25O_7.δ thin filmsSYDOW, J. P; CHAMBERLAIN, D; RONNIG, F et al.IEEE transactions on applied superconductivity. 1997, Vol 7, Num 2, pp 2138-2141, issn 1051-8223, 2Conference Paper

Electromigration studies of the role of oxygen defects in YBa₂Cu₃O_7-δ grain boundary weak linksMOECKLY, B. H; BUHRMAN, R. A.IEEE transactions on applied superconductivity. 1993, Vol 3, Num 1, pp 2038-2042, issn 1051-8223, 4Conference Paper

Scattering and spectral shape in ballistic-electron-emission microscopy of NiSi₂-Si(111) and Au-Si samplesHALLEN, H. D; FERNANDEZ, A; HUANG, T et al.Physical review. B, Condensed matter. 1992, Vol 46, Num 11, pp 7256-7259, issn 0163-1829Article